Blar i SINTEF Open på forfatter "Søndenå, Rune"
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The Effect of Pull Speed and Heat Treatment on Thermal Donors in Czhocralski Silicon
Olsen, Espen; Mehl, Torbjørn; Stalheim, Helene Eikaas; Juel, Mari; Søndenå, Rune; Burud, Ingunn (Peer reviewed; Journal article, 2021) -
Impact of thermal history on defects formation in the last solid fraction of Cz silicon ingots
Lanterne, Adeline Anne; Gaspar, Guilherme Manuel Morais; Haave, Bjørn; Jomâa, Moez; Søndenå, Rune; Hupfer, Alexander; Hu, Yu; Sabatino, Marisa Di (Peer reviewed; Journal article, 2018)For the first time, the impact of the tail detachment on the quality of the last solid fraction of a Czochralski silicon ingot body is reported. Simulations of the thermal history were performed on CGSim software and showed ... -
Investigation of veryintenseD3-band emission in multi-crystalline silicon wafers using electron microscopy and hyperspectral photoluminescence imaging
Thøgersen, Annett; Jensen, Ingvild Julie Thue; Graff, Joachim Seland; Ringdalen, Inga Gudem; Almeida Carvalho, Patricia; Mehl, Torbjørn; Zhu, Junjie; Burud, Ingunn; Olsen, Espen; Søndenå, Rune (Peer reviewed; Journal article, 2022)Defects in high performance multi-crystalline silicon wafers can be detrimental to the lifetime of the solar cell. It is, therefore, important to study and understand the underlying structure and chemical elements present ... -
Minority carrier lifetimes in Cz-Si wafers with intentional V-I transitions
Søndenå, Rune; Ryningen, Birgit; Juel, Mari (Peer reviewed; Journal article, 2017)A p-type Cz-Si crystal has been pulled with varying pulling speed in order to produce wafers containing two distinct regions; A region with silicon self-interstitial defects, and a vacancy dominated region. Band-to-band ... -
Recombination activity of grain boundaries in high-performance multicrystalline Si during solar cell processing
Krzysztof, Adamczyk; Søndenå, Rune; Stokkan, Gaute; Looney, Erin; Jensen, Mallory; Lai, Barry; Rinio, Markus; Sabatino, Marisa Di (Journal article; Peer reviewed, 2018)In this work, we applied internal quantum efficiency mapping to study the recombination activity of grain boundaries in High Performance Multicrystalline Silicon under different processing conditions. Wafers were divided ... -
Studying light-induced degradation by lifetime decay analysis: Excellent fit to solution of simple second-order rate equation
Nærland, Tine Uberg; Haug, Halvard; Angelskår, Hallvard; Søndenå, Rune; Marstein, Erik Stensrud; Arnberg, Lars (Journal article; Peer reviewed, 2013)Twenty different boron-doped Czochralski silicon materials have been analyzed for light-induced degradation. The carrier lifetime degradation was monitored by an automated quasi-steady-state photoconductance setup with an ...